Vertical super-thin body semiconductor on dielectric wall devices and methods of their fabrication

ABSTRACT

The present invention is a semiconductor device comprising a semiconducting low doped vertical super-thin body (VSTB) formed on Dielectric Body Wall (such as STI-wall as isolating substrate) having the body connection to bulk semiconductor wafer on the bottom side, isolation on the top side, and the channel, gate dielectric, and gate electrode on opposite to STI side surface. The body is made self-aligned to STI hard mask edge allowing tight control of body thickness. Source and Drain are made by etching holes vertically in STI at STI side of the body and filling with high doped crystalline or poly-Si appropriately doped with any appropriate silicides/metal contacts or with Schottky barrier Source/Drain. Gate first or Gate last approaches can be implemented. Many devices can be fabricated in single active area with body isolation between the devices by iso-plugs combined with gate electrode isolation by iso-trenches. The body can be made as an isolated nano-plate or set nano-wire MOSFET&#39;s on the STI wall to form VSTB SOI devices.

CLAIM FOR PRIORITY

This application is a continuation of U.S. Non-Provisional patentapplication Ser. No. 13/940,190 filed on Jul. 11, 2013, which in turnclaims priority to provisional patent application No. 61/713,003, filedon Oct. 12, 2012, by the inventor of the same name.

INCORPORATION BY REFERENCE

All publications mentioned herein are incorporated herein by referenceto disclose and describe the methods and/or materials in connection withwhich the publications are cited. All publications, patents, and patentapplications mentioned in this specification are herein incorporated byreference in their entirety and for all purposes to the same extent asif each individual publication, patent, or patent application wasspecifically and individually indicated to be incorporated by reference.

Such incorporations include United States patent U.S. Pat. No.8,120,073, inventors: Rakshit et al. entitled, “Trigate Transistorhaving Extended Metal gate Electrode”; U.S. Pat. No. 7,279,774,Inventors: Seo et al. entitled, “Bulk Substrates In FINFETS With TrenchInsulation Surrounding Fin Pairs Having Fins Separated By Recess HoleShallower Than Trench”; U.S. Pat. No. 7,842,566, inventors Lee et al.entitled, “FINFET and Method of Manufacturing the Same”; U.S. Pat. No.7,560,756, inventors: Chau et al. entitled, “Tri-Gate Devices andMethods of Fabrication”; U.S. Pat. No. 7,358,121, inventors: Chau et al.entitled, “Tri-Gate Devices and Methods of Fabrication”; U.S. Pat. No.7,268,058, inventors: Chau et al. entitled, “Tri-Gate Transistors andMethods to Fabricate Same”; U.S. Pat. No. 7,005,366, inventors: Chau etal. entitled, “Tri-Gate Devices and Methods of Fabrication”; U.S. Pat.No. 6,914,295, inventors: Chau et al. entitled, “Tri-Gate Devices andMethods of Fabrication”; U.S. Pat. No. 7,560,756, inventors: Chau et al.entitled, “Tri-Gate Devices and Methods of Fabrication”; U.S. Pat. No.7,148,548 inventors: Doczy et al. entitled, “Semiconductor Device withHigh-K gate Dielectric and a Metal Gate Electrode”; US Pat. App. No.2010/0163970, inventors: Rakshit et al. entitled, “Trigate TransistorHaving Extended Metal gate Electrode”; Auth, C., et al., A 22 nm HighPerformance and Low-Power CMOS Technology Featuring Fully-DepletedTri-Gate Transistors, Self-Aligned Contacts and High Density MIMCapacitors, 2012 Symposium on VLSI Technology Digest of TechnicalPapers, (2012), 131-132; Park, J. K., et al., Lanthanum-Oxide-DopedNitride Charge-Trap Layer for a TANOS Memory Device, 2011, IEEETRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 10, OCTOBER (2011),3314-3320; Padovami, A., et al., A Comprehensive Understanding of theErase of TANOS Memories Through Charge Separation Experiments andSimulations, 2011, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO.9, SEPTEMBER, (2011), 3147-3145; Beug, M. F., et al., TaN and Al2O3Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention ofSub-50-nm TANOS NAND Flash Memory Cells, 2011, IEEE TRANSACTIONS ONELECTRON DEVICES, VOL. 58, NO. 6, JUNE (2011), 1728-1734; and James,Dick, Intel's 22-nm Trigate Transistors Exposed, SOLID STATE TECHNOLOGY,available athttp://www.electroiq.com/blogs/chipworks_real_chips_blog/2012/04/intel-s-22-nm-trigate-transistors-exposed.html(last visited Sep. 24, 2012).

BACKGROUND OF THE INVENTION

1. Field of Invention

The present invention relates to the field of semiconductor integratedcircuit manufacturing, and more particularly to a Vertical Super-ThinBody Field Effect Transistor (VSTB-FET) made ofSemiconductor-On-STI-Wall structure and its methods of fabrication.

2. Discussion of Related Art

In order to increase the device performance, silicon on isolator (SOI)transistor has been proposed for the fabrication of modern integratedcircuits. FIG. 1 illustrates the standard fully depleted (FD) silicon onisolator (SOI) MOSFET transistor (FD SOI MOSFET) 1000. The transistor1000 includes a single crystalline silicon substrate 1020 having aninsulating layer 1040, such as a buried oxide formed thereon. A singlecrystalline silicon body 1060 is formed on the insulating layer 1040. Agate dielectric layer 1080 is formed on the single crystalline siliconbody 1060 and a gate electrode 1100 formed on the gate dielectric 1080.Source 1120 and Drain 1140 regions are formed in silicon body 1060 alonglaterally opposite sides of the gate electrode 1100.

From device physics it is clear that the body should not be doped whichmakes the drive current (Ion) of this device and other performanceparameters beneficial. With no doping in the body only the electrostaticcontrol is the mechanism for Vth and leakage control. To control thechannel and provide low subthreshold leakage (Ioff) the thickness of thebody (Tsi) is to be about ⅓ of the channel length. For practicalpurposes if one needs to make 15 nm channel length (Lg) Tsi is to beabout 5 nm. As of now it is practically impossible to make a SOI waferof 300 mm with 5 nm silicon body thickness and thickness variabilityacross wafer about 5% (0.25 nm which is less than a single atomic layerof silicon lattice). This is the reason why such an approach has noscalability advantages.

A double gate (DG) FD SOI MOSFET device based on SOI FinFET structure,such as shown in FIG. 2 has been proposed to alleviate the siliconthickness control issue. The double gate (DG) device 2000 includes asilicon body 2020 formed on an insulating substrate 2040. A gatedielectric 2060 is formed on two sides of the silicon body 2020 and agate electrode 2080 is formed adjacent to the gate dielectric 2060formed on the two sides of the silicon body 2020. A sufficiently thickinsulating layer 2090, such as silicon nitride, electrically isolatesthe gate electrode 2080 from the top of silicon body 2020.

The device 2000 essentially has two gates, one on either side of thechannel of the device. Because the double gate device 2000 has a gate oneach side of the channel, thickness (Tsi) of the silicon body can bedouble that of a single gate device and still obtain a fully depletedtransistor operation. That is, with a double gate device 2000 a fullydepleted transistor can be formed where Tsi=(2*Lg)/3. The mostmanufacturable form of the double gate (DG) device 2000, however,requires that the body 2020 patterning be done with photolithographythat is 0.7× smaller than that used to pattern the gate length (Lg) ofthe device. Although, double gate structures double the thickness of thesilicon film (since there is a gate on either side of the channel) thesestructures, however, are very difficult to fabricate for a practicallyusable aspect ratio. For example, silicon body 2020 requires a siliconbody etch which can produce a silicon body 2020 with an aspect ratio(height to width) of about 5:1. Low performance achieved for more than10 years of efforts, higher price per wafer for SOI and Floating bodyeffects to be more pricy to address in designing any integratedcircuitry all together have made the industry reluctant to work hard onthe implementation of high aspect ratio double gate FinFET's.

A bit of improvement of the DG SOI FinFET is made as illustrated in FIG.3 a and FIG. 3 b where the thick dielectric on the top of the FinFET wasmade as thin as the gate dielectric and the FinFET called as tri-gatesince it has 3 active sides of the Fin as the channel. This innovationmakes the effective channel width more beneficial. And it does make itmore manufacturable for a practically achievable modest aspect ratio ofthe Fin to be about 1 to 3. FIG. 3 a is a cross-sectional illustrationof the semiconductor body and the gate electrode. FIG. 3 a illustrates across-section taken within the channel region 7000 of the semiconductorbody 3000. The metal gate electrode 1000 and a high-k gate dielectriclayer 1100 are shown as being formed on three sides of the channelregion 7000. The metal gate electrode 1000 and the high-k gatedielectric layer 1100 extend down into the isolation layer 4000 due torecess 8000.

FIG. 3 b illustrates 3D view of the Tri-Gate FinFET. The device has agreat advantage of having the body electrically connected to thesubstrate which removes all the circuit design, reliability, and leakageissues related to the floating body SOI UTB and FinFET devices so thatit can be used for any high performance and low power application.

Further scaling to below 10 nm channel length which has to have the bodythickness of 5 nm and less becomes difficult to fabricate because thisthree dimensional (3D) tiny Fin standing alone can be broken and/orwashed away by cleaning especially when using sonication for betterparticle removal which is important for cleaning 3D reliefs. Anotherdisadvantage in scaling is that. It is known that when Si body thicknessgets below 5 nm the band structure starts depending on the thickness ina device performance improvement favor. Due to the quantum confinementeffects the band gap gets wider which provides a higher barrier,significantly less the subthreshold leakage (Ioff) and better Ioffcontrol which in turn allows to go for a more aggressive channel lengthreduction resulting as a positive side effect to a less temperaturedependence of the performance parameters. It should be noted that aslong as the body thickness is getting less than 8 nm the second gatefrom the opposite side and the top narrow gate are losing their effectson the total inversion charge concentration and at 5 nm thickness thereis no merit of having double gate structure due to strong overlapping ofthe 2D inversion carrier layers from both gate sides. It is debatable atthis point of the advance device physics knowledge, but mobility mustalso degrade for a double gate structure due to presence of the strongelectric field on both sides. So manufacturing the three gates or doublegates becomes more complex without the additional merit of having them.

Furthermore the double gate (or Tri-gate for that matter) is difficultto make with a Fin of a high aspect ratio. The best practicallyachievable ratio is about 3, which is difficult to increase whilescaling the Fin thickness because of a Fin mechanical fragility concern.

In the proposed invention this aspect ratio can easily go to up to 10 ormore. Using a single side gate the current achieved per Fin ispotentially substantially more than for double-gate or triple gatestructures. So a higher current can be achieved per μm-fp (per μm offootprint). The higher aspect ratio should certainly provide bettermobility and less interface roughness scattering. This is most importantat high inversion regime when Ion is measured as the most importantperformance parameter. Heat dissipation from the channel also becomeseasier due to 4× less power density per physical μm width is generated.An important aspect of the Double-Gate architecture (and tri-gate forthat matter) is that when the inversion layers are overlapped forming asingle 2D-carrier gas, screening of the electric field from both sidesdoubles the carrier concentration in the channel. This has a fewconsequences:

-   1. Much higher electron-electron (hole-hole) scattering resulting in    reduction of the mobility and the ballistic velocity;-   2. Every carrier is now scattered by the interface roughness from    both sides which again results in less mobility;-   3. It is a very well known fact that usage of the high-k results in    less mobility due to higher interface traps (Dit), soft-phonon    scattering, and large intrinsic charge in high-k materials. So    having the high-k on both sides of the body for the single inversion    layer is certainly not beneficial for device performance.

As can be seen in a paper by Auth C. (see list of referenced papersabove) the Fin is made with rather large tilts on both sidewallssuggesting that it is not simple even for the precision of Intel'stechnology to make it more vertical or ultimately ideal vertical Fininterfaces. This results in a few consequences:

-   1. Scaling of such a sloppy Fin goes to its limit when thinning at    the bottom results in over-etching the tip and the    Fin-height/Fin-thickness aspect ratio is self-limited;-   2. Fin aspect ratio can not be large enough due to bringing a large    variation of the body thickness and the threshold voltage (Vth) as a    result of it and the thinner the Fin the more Vth variability comes    about for the same relative variability;-   3. Such a sloppy Fin results in a Vth changing along the Fin height    leading to much less electrostatic control at the Fin bottom vs. the    top. So a higher sub-Vth leakage (Ioff) is expected that limits the    scaling;-   4. It is well known that the sloppy Si surface will have a high    interface trap density (Dit) which in turn brings a high GIDL    current problem (not addressed in Auth's paper because of the    leakage due to the consequence 3 above, which is likely    over-shadowing the GIDL).

Rather low Ion current performance for both nMOSFET and pMOSFETpublished in Auth's paper suggests that these considerations above arelikely correct and significant, especially accounting for such largeefforts to reduce the parasitic resistance which might result that thetotal performance is indeed limited by the channel mobility.

Performance variability shown in Auth's paper is also needed to bebetter by at least 50% for Vth to be about 50 mV not 100 mV as of now.

There is a need, therefore, for a MOSFET transistor, which can bescalable and has better performance than DG or tri-gate transistors.

BRIEF SUMMARY OF THE INVENTION

Fabrication of the super-thin body on SOI with a required uniformityacross a 300 mm (or 450 mm in future) wafer is not possible. FinFET onSOI is proven to be not manufacturable for a number of reasons observedas many unsuccessful efforts to implement it in the mass production.Bulk-FinFET (a.k.a. tri-gate) with a modest aspect ratio of the Finwidth to height is implemented into the mass production at about 24 nmand now has become the main stream in R&D activity across the industry.Scaling of the latter concept is under scrupulous attention. For thetechnology nodes at and below 10 nm it seems to be rather difficult toscale the bulk FinFET as a tri-gate structure to a highly manufacturabledevice. A very thin Fin below 6 nm keeping a practical aspect ratio isdifficult to fabricate due Fin's mechanical fragility. For a tri-gateMOSFET structure with less than 20 nm channel length, a thin Fin of 9 nmor less is needed. For such a thin Fin the quantum confinement effectsof the inversion layer formation suggest little merits in having doublegate not even talking about the third gate. But making a tri-gatetransistor in a scaled fashion of the known architecture bringstremendous obstacles for achieving its acceptable manufacturability. Thepresent invention is a semiconductor device comprising a semiconductinglow doped vertical super-thin body (VSTB) formed on an dielectric bodywall such as the STI-wall as an isolating substrate having the VSTB bodyconnection to the bulk semiconductor wafer on the bottom side, isolationon the top side, and the channel, the gate dielectric stack, and gateelectrode stack on the opposite to the STI side surface resulting in aField Effect Transistor (VSTB-FET). The VSTB body is made self-alignedto the STI hard mask edge allowing a very tight control of the VSTB bodythickness. Source and Drain are made by etching trenches/holesvertically in the STI connecting at the STI side to the VSTBsemiconductor body and filling with high doped poly-Si appropriatelydoped and covered with a low resistive material or materials stackincluding any appropriate silicides, metal nitride barrier layers or/andmetal. The device is very flexible in accommodating the Schottky barrierSource/Drain in a very efficient way. Tunneling MOSFET is also easy toform taking the advantage of the Source/Drain formation method in theholes/trenches etched in the isolating wall such as STI wherein usingappropriate materials a skilled in the art specialist can engineer andform the Source/Drain from materials having appropriate work functionsand tunneling barriers as well as barrier materials to prevent anychemical interaction of VSTB semiconductor material with theSource/Drain forming materials if desired. To this extent anyheterogeneous junctions can be formed as the Source/Drain stackproviding an appropriate switching characteristics of the VSTB FET.“Gate first” or “Gate last” approaches can be easily implementeddepending on applications. Single or many VSTB-FET devices can befabricated in a single active area with VSTB body isolation betweendevices by iso-plugs combined with gate electrode isolation byiso-trenches. If desired, for high radiation hardness applications theVSTB body can be easily made as a VSTB SOI MOSFET with the currentflowing horizontally with Source and Drain at the VSTB left and rightsides or vertically with Source and Drain at the bottom and the topcorrespondingly. If desired, a device can also be made as a set ofnanowire MOSFET's on the insulating wall such as the STI wall resultingin a nanowire-based VSTB-nWi-FET device. Many memory devices such asDRAM, NOR and NAND Flash (floating gate, trap-based, and ferroelectricbased), SRAM and others stand alone or embedded semiconductor productscan be fabricated using VSTB-FET as the basic building device and basicfabrication method. The absence of the doping in VSTB results in absenceof Vth variability related to the random dopant fluctuation which is themain component of Vth variability in the standard CMOS technology basedon the highly doped substrate. Low Vth variability brings VSTB-FET to besuitable for all the high performance ULSI, microprocessors, SRAM, DRAM,Flash, many analog, RF, CMOS IS (Image Sensors), and System-On-Chip(SoC) applications.

Objects and advantages will become apparent to those skilled in the artfrom the following detailed description read in conjunction with theappended claims and the drawings attached hereto.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 (Prior art) is a cross-section of UTB SOI MOSFET.

FIG. 2 (Prior art) is a 3D illustration of Double Gate MOSFET made ofSOI FinFET.

FIG. 3 a (Prior art) is a cross-section of Tri-gate MOSFET made of BulkFinFET.

FIG. 3 b (Prior art) is a 3D illustration of Tri-gate MOSFET made ofBulk FinFET.

FIG. 4 is a 3D illustration of all the principle layers of theinvention. Some parts are removed for clarity of the locations of themost important layers.

FIG. 5 a and FIG. 5 b are vertical at the gate-to-source overlaplocation and horizontal at the mid-depth of VSTB cross-sectional viewsto illustrate all the principle layers of the VSTB-FET.

FIG. 6 is a process flow of forming a VSTB-FET device. “Gate last”approach.

FIG. 7 is a cross-sectional illustration of gate stack comprising thegate dielectric stack (GDS) and gate metal stack (GMS) with gateelectrode filling.

FIG. 8 is a process flow fragment for the self-aligned approach of VSTBformation.

FIG. 9 a through FIG. 9 g are cross-sectional illustrations of theself-aligned approach of the VSTB formation process.

FIG. 10 is a process flow fragment for the SD formation.

FIG. 11 a through FIG. 11 f are cross-sectional illustrations of the SDformation process. Protection layer (403) formed on the top of the dummyfilled gate area (402) is optional for a higher manufacturability of SDformation process is shown only in FIG. 11 a and not shown in other FIG.11 b through FIG. 11 f for clarity of illustration.

FIG. 12 a, FIG. 12 b, and FIG. 12 c are cross-sectional illustrations ofthe gate stack formation process and its location with respect to theSource/Drain depth.

FIG. 13 a is a layout view of the 1G-4T device when 4 MOSFET's with thecommon gate are formed in the same active area (cell). The very toplayers: ESL (301), ILD (102), and PILD (103) are not shown for moreclear view of the key device layers.

FIG. 13 b is an electrical equivalent circuit of the 1G-4T device formedin the same active area (cell).

FIG. 13 c is a cross-section view along section 13 c-13 c in FIG. 13 aof the 1G-4T device formed in the same active area (cell).

FIG. 14 a is a layout view of a particular embodiment of the VSTB-FETdevice where 2 MOSFET's with the common gate are formed in the sameactive area. The very top layers: ESL (301), ILD (102), and PILD (103)are not shown for more clear view of the key device layers.

FIG. 14 b is an electrical equivalent circuit of the two VSTB-FETdevices formed in a single active area.

FIG. 14 c is a cross-section illustration along section 14 c-14 c inFIG. 14 a of the 2 VSTB-FET devices in parallel formed in a singleactive area (cell).

FIG. 15 a is a layout view of a particular embodiment of VSTB-FETdevices where 2 MOSFET's with the isolated gates are formed in the sameactive area. The very top layers: ESL (301), ILD (102), and Protectionlayer (103) are not shown for more clear illustration of functioning thekey device layers.

FIG. 15 b is an electrical equivalent circuit of the two separateVSTB-FET devices formed in a single active area.

FIG. 16 is a cross-sectional view of a particular embodiment of theVSTB-FET devices where 2 MOSFET's with the isolated gates are formed inthe same active area.

FIG. 17 a through FIG. 17 f are sets of cross-sections is shown toillustrate the evolution of the SD in SD formation process when aprotection layer is implemented.

FIG. 18 a is a schematic 3D view of a VSTB-FET with SD self-aligned tothe Gate and VSTB by 2-Dimensional self-alignment (2DSA) process.

FIG. 18 b is a top view of two VSTB-FET's having the common gate formedby the 2DSA process. Layers 102, 103 and 340 are removed for clarity.

FIG. 19 a and FIG. 19 b are vertical at the source-to-isolation areaoverlap location and horizontal at the mid-depth of VSTB cross-sectionalviews to illustrate all the principle layers of the VSTB-FET formed bythe 2-Dimensional self-alignment (2DSA) process shown in FIG. 18 b.

FIG. 20 is a cross-sectional view of the VSTB-FET formed by the2-Dimensional self-alignment (2DSA) process: 20-20 cross-section in FIG.18.

FIG. 21 is a cross-sectional view of the VSTB-FET formed by the2-Dimensional self-alignment (2DSA) process: 21-21 cross-section in FIG.18.

FIG. 22 is a cross-sectional view of the VSTB-FET formed by the2-Dimensional self-alignment (2DSA) process: 22-22 cross-section in FIG.18.

FIG. 23 a is a top view of the VSTB-FET device formed as a circular SOIVSTB-FET device with the vertical channel in a single active area.

FIG. 23 b is an electrical equivalent circuit of the circular SOIVSTB-FET devices formed in a single active area.

FIG. 23 c is a cross-sectional view of the final structure according tothe modified embodiment for forming the SOI VSTB-FET device with thevertical channel.

FIG. 23 d is a top view of the VSTB-FET CMOS inverter formed in twoactive areas as a couple of SOI VSTB-FET devices with the verticalchannel in a single active area with the body connected to an externalcontact each. 2 L-shaped areas drawn by the dashed lines illustrate themask shape for ion implantation of p-type and n-type for Source/Drainand body contact formation.

FIG. 23 e is an electrical equivalent circuit of CMOS inverter formed asa couple of SOI VSTB-FET devices with the vertical channel in a singleactive area with the body connected to an external contact.

FIG. 24 a is across-section views of the initial structure according tothe preferred embodiment for forming the true SOI VSTB-FET device.

FIG. 24 b is a cross-section view of the final structure according tothe modified embodiment for forming the true SOI VSTB-FET device.

FIG. 25 is a cross-section view of the final structure according to themodified embodiment for forming a nanowire based transistor calledVSTB-nWi-FET device.

FIG. 26 a is a layout view of a NOR 1T Flash cell with 1 transistor and2 bits per cell fabricated using VSTB-FET design where a ferroelectricdielectric stack (such as SiO2-SrTiO3, Pb(TiZr)O3, Sr2(TaNb)2O7 and thelike) or SONOS (TANOS and the like) stack is formed as the gate stack.By repeating this column of cells to the left and to the right a NORFlash array can be formed with 2 bits per cell.

FIG. 26 b is a layout view of the NOR 2T Flash device design with 2transistors and 2 bits per cell fabricated with 2DSA method whereSource/Drain and doped layer between the Word Line (WL) and Select Line(SL) are formed in self-aligned way w.r.t. the VSTB, WL, and SL.

FIG. 26 c is an electrical equivalent circuit of a NOR 2T Flash cellwith 2 bits per cell in Program mode. Voltage magnitudes marking WL, BL,GL (Ground Line), and the substrate node are shown as an example of thevoltage magnitudes and signs of those voltages and the real voltages aredetermined by a particular cell design, types of barrier and memorymaterials, and thicknesses of choice. Dashed lines show some disturblocations for which the requirements are more relaxed as compared to theplanar MOSFET design due to the non-doped VSTB and fully-depleted modeof operation reducing the disturb electric fields in the memory stacksignificantly.

FIG. 26 d is an electrical equivalent circuit of a NOR 2T Flash cellwith 2 bits per cell in Read mode. Voltage magnitudes marking WL, BL, GL(Ground Line), and the substrate node are shown as an example of thepotential scale and signs of those voltages and the real voltages aredetermined by a particular cell design, types of barrier and memorymaterials, and thicknesses of choice. Dashed lines show some disturblocations for which the requirements are more relaxed as compared to theplanar MOSFET design due to the non-doped VSTB and fully-depleted modeof operation reducing the disturb electric fields in the memory stacksignificantly.

FIG. 27 a is a layout view of a NAND Flash column with 2 bits per cellfabricated using VSTB-FET design with Source/Drain along column VSTBused for low resistive connection along the column VSTB where aferroelectric dielectric stack (such as SrTiO3 and the like) ortrap-based memory stack (TANOS, SONOS and the like) is formed as thegate stack. By repeating this column to the left and to the right a NANDFlash array is formed with 2 bits per cell. 912 is a word-line made ofmetal-zero (marked elsewhere by number 810), Me1 interconnects, ormetal-zero strapped by Me1.

FIG. 27 b is a layout view of a NAND Flash column with 2 bits per cellfabricated using VSTB-FET design with no Source/Drain used for lowresistive connection along the column VSTB having highly doped thoseportions of VSTB column against the iso-trenches formed in the gate areaand where a ferroelectric dielectric stack (such as SrTiO3 and the like)or trap-based memory stack (TANOS, SONOS and the like) is formed as thegate stack. By repeating this column to the left and to the right a NANDFlash array is formed with 2 bits per cell. 912 is a word-line marked by810 here if made of metal-zero.

FIG. 28 a is a layout view of a NOR FG Flash 2 bits cell fabricatedusing the preferred embodiment of the VSTB-FET design where the floatinggate is included in the dielectric stack as a part of the gate stack.Iso-trenches parallel to the VSTB string are needed to isolate the FGfrom each other in a single active area. By repeating this cell upwardand downward and to the left and to the right a NOR Flash array can beformed with 2 bits per cell.

FIG. 28 b is a layout view of a NOR FG Flash 2 bits cell fabricatedusing VSTB-FET design featuring 2DSA where the floating gate is includedin the dielectric stack as a part of the gate stack. Iso-trenchesperpendicular to the VSTB string is needed to isolate the FG from eachother in a single cell string. Repeating this cell upward and downwardand to the left and to the right a NOR Flash array can be formed with 2bits per cell.

FIG. 29 a is a layout view of a NAND FG Flash column with 2 bits percell where the floating gate is included in the dielectric stack as apart of the gate stack with the iso-trenches formed to isolate the FGfrom each other in a single column having the VSTB-FET device designwith Source/Drain at the STI side on the opposite side from iso-trenchesformed for low resistive connection along the column VSTB. By repeatingthis column to the left and to the right a NAND FG Flash array is formedwith 2 bits per cell.

FIG. 29 b and FIG. 29 c are a layout view of a NAND FG Flash column with2 bits cell using VSTB-FET device design where the floating gate isincluded in the dielectric stack as a part of the gate stack withiso-trenches formed to isolate the FG from each other in a single columnfabricated having no Source/Drain for low resistive connection along thecolumn VSTB and a cross-sectional view showing Floating-Gatetapering-off shape for increasing the floating-gate to control gatecapacitive coupling for program voltage reduction. By repeating thiscolumn to the left and to the right a NAND FG Flash array is formed with2 bits per cell.

FIG. 29 c is a cut away view of a floating gate in a FG flash array.

FIG. 30 a is a layout view of a DRAM cell group to illustrate thelocation of BL's, WL, iso-plugs, Drain connected to the Capacitor (notshown), Source connected to the BL.

FIG. 30 b is a cross-sectional view to illustrate the location of theDrain and Source connected to the BL.

FIG. 31 a is a layout view of a DRAM cell to illustrate the location of2 WL's, 1 BL, Source, Drain, and inter-cell isolation.

FIG. 31 b is a cross-sectional view of a DRAM cell to illustrate thelocation of BL's, Source and Source regions, and inter-cell isolation atthe bottom of the gate area.

FIG. 31 c is a cross-sectional view of a DRAM cell to illustrate thelocation of WL's, Drains and Drain regions, Source regions, AT channel,and inter-WL isolation. The curve with 2 sided arrows shows the channelcurrent path. DRAM capacitors are connected to the drain contact made ofthe zero-metal trench and drain contact filling (905). Curve with twoarrows indicates the current path from Source to Drain.

FIG. 32 a is a layout view of a DRAM array fragment of architecture witha single BL and 2 WL's having a set of dummy BL's as well, to illustratethe location of BL's, WL, iso-plugs, Drain connected to the Capacitor(not shown), Source connected to the BL.

FIG. 32 b is a layout view of a DRAM array fragment of architecture with2BL's and 2 WL's to illustrate the location of BL's, WL, iso-plugs,Drain (connected to the Capacitor, not shown), Source connected to theBL.

FIG. 33 a is a layout view of the SRAM cell fabricated from VSTB-FETdevices. Layout of Me1 and Me2 interconnects are not shown but ratherthey are indicated schematically by black wide lines connected to thecontact (735). Hc and Lc arrows indicate the cell size and thelong-dashed lines show the cell symmetry lines for mirroring the cellupward/downward and to the left and the right to form the array.

FIG. 33 b is a cross-sectional view of the SRAM cell along a plane 1-1as indicated in FIG. 33 a.

FIG. 34 a is a cross-sectional view to illustrate the location of theSTI buried etch stop layer for SD depth control after the gate areaplanarization process step.

FIG. 34 b is a cross-sectional view to illustrate the location of theSource/Drain bottom surface at the STI buried etch stop layer after theSource/Drain area is opened.

FIG. 35 a is a cross-sectional illustration of the counter-doping of aportion of VSTB and a portion of the substrate in a single active areato form a couple of CMOS inverters with the common gate in a singleactive area if desired to significantly increase the transistorsdensity.

FIG. 35 b is a top view illustration of the counter-doping of the VSTBand the substrate in a single active area to form a couple of CMOSinverters with the common gate in a single active area.

FIG. 35 c is a top view as in a layout of a couple of CMOS inverterswith the common gate formed in a single active.

FIG. 35 d is an electrical equivalent circuit of the couple of CMOSinverters with the common gate formed in a single active area. A skilledin art specialist can design a lot of varieties of IC blocks which canhave 4 and more inverters in a single active area.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is a novel vertical super-thin body (VSTB) fieldeffect transistor (FET) structure (VSTB-FET) and its methods offabrication. In the following description numerous specific details areset forth in order to provide a thorough understanding of the presentinvention. In other instances, well-known semiconductor process andmanufacturing techniques have not been described in particular detail inorder to not unnecessarily obscure the present invention.

In an embodiment of the present invention, the VSTB-FET is asemiconductor on bulk c-Si transistor. The VSTB-FET is ideal for use infully depleted VSTB transistor applications where the body electricalconnection to the wafer substrate is essential, as illustrated in FIG.4, FIG. 5 a, and FIG. 5 b.

The present invention is a semiconductor device comprising asemiconducting low doped vertical super-thin body (VSTB) connected to avertical wall of a dielectric body, such as the STI, having theconnection to the bulk semiconductor substrate at the bottom side,isolation at the top side, and the channel and the gate stack (GS)consisting of gate dielectric stack (GDS), metal gate stack (MGS), andgate electrode filling (GEF) on the opposite to the dielectric body (STIside) VSTB surface. Source and Drain (SD) are formed in the dielectricbody connected to the VSTB on the opposite sides of the gate resultingin VSTB-FET. The body is formed self-aligned to the STI hard mask edgeallowing a very tight control of the body thickness. Source and Drainare formed before the gate stack formation (“Gate last approach”) byusing dummy dielectric filling (such as SiO2 or the like) in the volumewhere the GS is going to be. Source and Drain are made by etchingtrenches/holes vertically in the STI adjacent at the STI side to theVSTB and depositing in to the trenches/holes a thin heavilyappropriately doped poly-Si layer followed with an anneal to driven-indoping from the poly-Si into SD regions of VSTB. Doped poly-Si iscovered with low resistivity materials stack (typically a barrier layerand a metal layer) like any appropriate silicides or/and inert metal ormetal nitrides, and the rest of the volume filled in with an inertconductive material (such as Tungsten), and finished with the surfaceplanarized by using chemical-mechanical polishing (CMP). If desired, arecess of the SD filling can be formed filled with a dielectric (such asSiN and the like) selective in etch to SiO2 and the like. The device isvery flexible in accommodating the Schottky barrier Source/Drain in avery efficient way. “Gate first approach” can be also easily implementeddepending on applications and lithography capabilities available. Singleor multiple VSTB devices can be fabricated in a single active area withVSTB isolation by iso-plugs combined with gate electrode isolation byiso-trenches. For a high radiation hardness applications the body can beeasily made as a VSTB SOI MOSFET with the current flowing horizontallyfrom Source to Drain in the VSTB channel or vertically with Sourcefabricated at the bottom and Drain fabricated at the top. Also thedevice can be made as a set of nanowires on an isolating wall of thedielectric body such as the STI wall to be a nanowire-based VSTB-nWi-FETSOI device.

An example of VSTB-FET 001 in accordance with a preferable embodiment ofpresent invention is illustrated in FIG. 4, FIG. 5 a, and FIG. 5 b.VSTB-FET 001 is formed according to the embodiment of a processintegration flow 002 shown in FIG. 6. Source/Drain holes/trenchesetching and filling can be formed after Gate stack formation(Traditional “Gate first” approach) since a much less thermal budget isneeded for dopant drive-in and activation due to using VSTB. VSTB-FET001 is formed on the semiconductor substrate 200 such but not limited tomonocrystalline silicon, germanium, gallium arsenide substrates and thelike.

Referring now to FIGS. 4 and 5 a, VSTB-FET transistor 001 includes asemiconductor body 100 formed on bulk semiconductor substrate 200 or ona stack such as semiconductor-on-isolator (SOI). Semiconductor body 100can be formed of any well-known semiconductor material,semiconductor-on-semiconductor stack, or semiconductormaterial-on-isolator, including but not limited to monocrystalline(c-Si) or polycrystalline silicon (poly-Si), germanium (Ge), silicongermanium (SixGey), gallium arsenide (GaAs), GaP, GaSb, InSb, carbonnanotubes (C-nT), and Graphene or Graphene-c-Si-stack (deposited ontothe dielectric body wall formed of dielectric stack such asSiO2(STI)-BN(Boron-Nitride barrier) wall, SiO2 STI wall, or c-Si VSTBand the like and integrated into a VSTB-FET according to Process 100P.Semiconductor body 100 can be formed of any well-known material whichcan be reversibly altered from an insulating state to a conductive stateby exploiting the field effect which provides near-surface conductivechanges by applying external electric potential controls. In a onepreferred embodiment, when the best electrical performance of VSTB-FETtransistor 001 is desired, semiconductor body 100 is ideally a singlecrystalline film. For example, semiconductor body 100 is a singlecrystalline film when VSTB-FET transistor 001 is used in highperformance applications, such as in Integrated Circuits (IC) with ahigh density circuit, such as a microprocessor and system-on-chip (SOC).However, Semiconductor body 100 can be a polycrystalline film when theVSTB-FET transistor 001 is used in applications requiring less stringentperformance, such as in liquid crystal displays. A dielectric body 300insulates semiconductor body 100 from other FET and forms interface withVSTB that provides a good electrostatic control of the gate voltage overthe entire body between Source 500 and Drain 600. The dielectric body300 is named the STI or the dielectric body in equivalent sense furtheron in this description. In an embodiment of the present invention,semiconductor body 100 is a single crystalline silicon film.Semiconductor body 100 has a pair of laterally opposite sidewalls 104and 105 separated by a distance which defines a semiconductor bodythickness T_(Si). Additionally, semiconductor body 100 has a top surface107 opposite a bottom surface 106 located at the boundary between thesemiconductor body 100 and substrate 200. The distance between the topsurface 107 and the bottom surface 106 defines the height of thesemiconductor body 100. In the embodiment of the present invention thebody height is approximately equal to the channel width W_(g). Actuallythe channel width is equal to semiconductor body 100 height minus thegate-to-substrate isolation 400 with a thickness T_(gs).

A process flow of VSTB-FET formation is shown in FIG. 6. After process100P of the VSTB formation by etching the c-Si under STI-hard mask edgespacer, the space opened 404 (the gate area, See FIG. 9 g) is filledwith the dummy dielectric 402 (such as TEOS SiO2, see FIG. 11 a),process 200P. Then after the Sources and Drains are formed, process300P, a substrate anneal is made for dopant drive-in into VSTB to formSD junctions, process 400P. Then the dummy SiO2 is recessed down leavingat the bottom the dielectric thickness appropriate for reduction of thegate-to-substrate capacitance, process 500P. In the preferred embodimentof the present invention, the VSTB-FET has a channel length L_(g) whichis defined by placement of the Source 500 and Drain 600, see FIG. 4.Source 500 and Drain 600 are formed in a manner self-aligned to theSemiconductor body 100 and formed by etching square or rectangularshaped holes/trenches in the STI along the surface 104 (see FIG. 5 a),process 300P, with a separation distance equal to the channel lengthL_(g). After the SD hole formation a thin layer of semiconductor (suchas poly-Si, SiGe, Ge, and the like) is deposited and doped for n-channelVSTB-FET by any donors (such as Arsenic—As, phosphorus—P) or forp-channel VSTB-FET by any acceptors (such as Boron—B, Indium—In, and thelike) using lithography followed with a rapid thermal anneal (RTA),process 400P, to drive in the dopants into VSTB to form Source 502 andDrain 602 junction regions (see FIG. 5 b) reaching the opposite surfaceof the VSTB 105 where the channel under the gate stack 700 and 800 isformed. After the RTA any methods for forming low resistive Source andDrain plugs is used such as forming barrier layer made of such asmaterials like a metal silicide or conductive metal nitride and fillingthe rest of the hole space with any high conductive material such asTungsten, Copper, metal silicides, metal nitrides, and the like and thenplanarized from the top surface by CMP. If desired to protect metalfilling in the SD plug areas from oxygen and moisture contaminationresulting in increase the SD resistance and to protect the gatedielectric from metal contaminations coming from SD-plugs a slightrecess of the SD-plugs is formed and filled with any dielectric material(such as SiN) or any inert conductive material such as metal nitridewith high selectivity to etching of SiO2 and SiN forming a protectionlayer 505, FIG. 11 f. Gate stack formation is described here toillustrate that the VSTB-FET device has such an advantage that it iseasy to be integrated with any advanced gate stack. In an embodimentdescribed in more details below a protection layer 403 (see FIG. 11 a)made of a material which can be selectively etched with respect to SiO2and SiN such as poly-Si, Al2O3, and the like is placed on the top of therecessed dummy dielectric 402 to improve the SD mask misalignmentmanufacturability of the VSTB-FET. The gate electrode is formed asfollows. First the protection layer 403 and dummy dielectric 402 layersare etched, process 500P, FIG. 6. Next the gate stack 700, see FIG. 7,which includes the gate dielectric stack (GDS), the metal gate stack(MGS), and the gate electrode filling (GEF) 800 is formed, process 600P.GDS stack includes an interfacial layer 701 (such as an ultra thin SiO2)and a high-k (such as HfO2, ZrO2, HfO2- and ZrO2 silicates, and thelike) layer 702. MGS includes the 1^(st) metal gate layer, metal stack,or composite 703 as the barrier layer prohibiting any interactionbetween the high-k and the Work-function materials, 2^(nd) layerproviding the correct work functions for n-channel VSTB-FET (being about4 eV) and p-channel VSTB-FET (being about 5 eV), and a conductivebarrier layer, stack or composite 704 for suppressing interaction of thework function determining gate material with the gate electrode filling(such as poly-Si or W, or the like), process 700P. To isolate VSTB-FET'sbelonging to the same VSTB string in an active area the isolation plugs900 are to be formed (iso-plugs), process 800P.

An alternate method of creating a VSTB without the use of a hard maskspacer would use a high resolution lithography process (EUV). This wouldinvolve the placement of photo resist in a such a manner as wouldprovide similar etch protection as a hard mask spacer.

Referring now to FIG. 5 b, in order to isolate the gate electrodesformed in a single active area but belonging to different VSTB-FET's theisolation tranches 902 (iso-trenches) are to be formed, process 800P.Since the depth of etching is about the same for both iso-plug andiso-trenches they can be formed with a single mask in a single lithostep and the same dielectric filling process. Unselective etching ofdifferent materials is made and the iso-plugs and iso-trenches arefilled with a dielectric such as TEOS SiO2, TEOS SiO2(N) enriched withNitrogen, Si3N4-SiO2 stack and the like with as small dielectricconstant as possible, followed with CMP to planarize the surface. ILDstack consisting on at least two layers such as SiO2 and S3N4 aredeposited on the top of the planarized structure, process 900P. Contactsthrough ILD to the Source, Drains, Gates, and substrate/n-well areformed, process 1000P, to finish the FEOL integration process.

Due to a very original integration scheme some key processes like VSTBformation process, Source/Drain formation process, and Gate stackformation process need to be considered in more details.

VSTB formation process module. There is no accurate lithographicalmethod to make such a thin layer of VSTB in the range of 10 nm to 2 nmor such. A few methods can be foreseen to form it using the STI hardmask edge step by forming a spacer, which can serve as hard mask for theVSTB formation. Usage of a spacer processing to make a small mask hasbeen known for a while but it is not directly applicable for formingVSTB. The first method is to make the spacer at the direct STI-hard maskstep after the hard mask etch when SiN-masking layer and SiO2-pad layersare etched away in STI area-to-be, defined by the Lithography. Thesecond method is to form the spacer at the reverse edge of the STI-hardmask after the STI formation is finished and the reverse hard mask isformed in a self-aligned fashion. A specialist skilled in art can modifythese methods being suggested in this invention. The second method isillustrated in FIG. 8 and FIG. 9 a-FIG. 9 g where it is shown how thestandard STI formation process is modified to form the reverse STI hardmask edge spacer. A standard STI formation process 101P results in thecross-sectional view illustrated in FIG. 9 a. A thermal SiO2 layer 303is used as the pad and LPCVD SiN layer 302 is deposited as the hardmask. The typical ratio range of the hard-mask made of SiN layer to theSiO2-pad oxide layer thickness is about 3 to 20 (pad oxide issignificantly thinner). In the suggested process 101P the ratio isopposite to the typical and is about 1 to 0.2 or so. Next process step102P is to recess the STI SiO2 filling by etching the STI material (suchas HDP SiO2 and the like). The recess depth determines the VSTBthickness and should be optimized accordingly. In the next process step103P the recessed area is filled with LPCVD SiN 301, FIG. 9 c, followedwith planarization by CMP process going selectively to SiO2-pad oxideunless all the SiN on the top of the SiO2-pad is removed exposing thepad oxide, process 104P, FIG. 9 d. The pad oxide is now etchedanisotropically and selectively to c-Si, followed with a low temperatureformation of a thin thermal oxide layer 109 (thickness in a range of 1to 5 nm or so), process 105P, resulting in the structure illustrated inFIG. 9 e. After a dielectric VSTB hard mask material deposition and etchback, process 106P, the dielectric cap 101 (the VSTB hard mask) looks asshown in FIG. 9 f. The VSTB hard mask material is to be the hardest forthe selectivity when etching the SiO2, poly-Si, c-Si, and other SiNlayers. The material can be such as high temperature LPCVD SiN, Al2O3 isthe preferable choice, a stack of the Al2O3 covered with the HT LPCVDSiN of ⅓ or so of the total thickness, Al2O3 nitridized from the surfaceby the N-plasma such as DPN (Decoupled Plasma Nitridation) or SPA (SlotPlane Antenna) process, AlON, Sc2O3, Gd2O3 and the like material with ahigh etch selectivity to other materials in the structure. Next step isthe etching of the c-Si to a depth determining the VSTB height and theresult is a formation of VSTB 100 and the gate area 404, process 107P,FIG. 9 g. An anti-parasitic doping layer 401 of the same type as VSTBdoping (to increase the parasitic MOSFET Vth between the right and theleft VSTB-FET's in a cell (parasitic MOSFET suppression) is done and thegate trench is filled with the dummy dielectric 402 that was thenplanarized, process 301P, resulting in the structure cross-section shownin FIG. 11 a. Protection layer 403 formed on the top of the dummy filledgate area 402 is optional for a higher manufacturability of SD formationprocess is shown only in FIG. 11 a and is explained in more detailbelow. The protection layer 403 can be made of poly-Si, a-SiCH(PECVD) aspreferable material, Al2O3, AlN, AlON and the like to provide the gatearea protection when SD mask misalignment results in opening the gatearea as well as the STI area near VSTB and Si3N4 and SiO2 layers are tobe etched for SD formation.

Source/Drain formation process module as a fragment of the total processintegration flow can be done in a few different locations of the totalprocess flow. This is a unique feature of the VSTB-FET device designconcept suggested in this invention. Three different locations arebriefly discussed here. The first preferable location is after VSTBformation (“gate last” process,). FIG. 10 shows the process flow chartand FIG. 11 a through FIG. 11 f shows the evolution of the structure indoing this process module. A critical dimension control and alignmentmask is applied and the SD holes or trenches are etched, process 302P,with resulting structure cross-section illustrated in FIG. 11 b. Next athin poly-Si layer 501 (or any other appropriatesemiconducting/conducting material) is deposited and doped by makingmasks and ion implantation, process 303P. Doping is made by donors (suchas P, As, and the like for c-Si) for n-channel VSTB-FET and by acceptors(such as B, In, and the like for c-Si) for p-channel VSTB-FET. A high tomoderate temperature fast RTA process is applied as a first step of thedoping drive-in anneals to form appropriately doped a VSTB Source region502 and a Drain region 602, process 304P, FIG. 11 d. A conductivebarrier layer 503 formed from a material such as a very inert metal notforming metal-silicide (such as conductive metal nitrides, Al, and thelike) or metal silicide itself (such as NiSi, CoSi2, and the like) isdeposited after the RTA, followed with filling the rest of thehole/trench space with a highly conductive material (such as W, Cu andthe like), a filling layer 504, process 304P, FIG. 11 d.Densification/silicide formation low temperature anneal follows with aCMP process to planarize the structure and remove these materials abovethe area where the gate is going to be, process 305P, FIG. 11 e. A smallrecess of the SD stack is made and filled with a material (conductive ordielectric) such as SiN for protecting source/drain metal filling suchas W and the like from O and moisture contamination with a highselectivity in etching to other exposed to the surface materials such asSiN (PECVD), polysilicon, and SiO2 followed with the planarization byCMP, process 306P, of the protection layer 505 in FIG. 11 f.

It should be noted that when VSTB thickness reaches the quantum layerthickness of about 4 nm for materials like c-Si as the results of theVSTB-FET scaling there is no need any more in forming Source/Drainregions doped differently for nMOSFET and pMOSFET. The idealSource-Drain would be a Fermi level pinning free heterojunction betweenthe Silicon VSTB and a Source/Drain material. The Source/Drain materialis formed as a stack of materials having the first chemically inertinterfacial layer material with the gap approximately equal to the VSTBsemiconductor gap (1.1 eV for c-Si as an example) +/−10% and minimalband-offsets with the semiconductor VSTB covered with a cover materialhaving a certain work function (Wf). This interfacial layer could be anymaterial satisfying the requirements listed above includingnon-stoichiometric TiN, TaTiN, and the like deposited by ALD withN-containing precursor going first having such N concentration whichprovides the gap close to the gap of c-Si or material such as mono- tomulti-layered Graphene sheet. The cover material is to be with low Wffor nMOSFET (so called n+/−type metal with Wf=˜4 eV) and with high Wffor pMOSFET (so called p+-type metal with Wf=˜5 eV). Low Wf material canbe any highly conductive material such as Al, Ta, TaAl, AlTiC, AlTiCO,Zr, Hf, and their alloys, and the like. High WF material can be anyhighly conductive material such as Pt, PtSi, NiSi, TiN, AlCO, TiAlN, andtheir alloys, and the like. Since the interfacial layer is inert and notinteracting with the silicon the source/drain structure is not thetypical Schottky barrier MOSFET which has the fundamental unsolvableissue of Fermi pinning at the interface with n-doped silicon.

Gate stack process module. In the gate last integration scheme for thestructure shown in FIG. 11 f, the first step is to remove the dummydielectric filling layer by the anisotropic selective etching leaving atthe bottom an appropriate thickness, which is to be thegate-to-substrate isolation 400, process 307P in FIG. 12 a. Then anadvanced process of formation “high-k/metal gate” is applied. FIG. 12 bshows that it is possible to use the advanced gate stack process 308P inthe VSTB-FET device. GDS comprising the ultrathin interfacial dielectriclayer and high-k layer itself can be easily formed inside the gate area.GDS formation follows with MGS formation comprising the appropriatep+/−type work function material or a stack of materials for p-channelVSTB-FET formed by deposition the layer and removal the layer in thearea of n-channel VSTB-FET followed by the deposition of the n+/−type ofmaterial or a stack (or vise versa), followed with the metal barrierlayer deposition for protecting the work function specific materialmetal layers from interaction with the gate electrode stack (GES). AfterGES is formed and planarized the structure looks as illustrated in FIG.12 b. FIG. 12 c indicates that the gate stack can be easily formeddeeper than the bottom location of the Source/Drain for providing abetter electrostatic control of the gate potential over the channel inVSTB resulting in the subthreshold leakage reduction. If the fillingmaterial is W or the like a formation of the protection layer 405 madeof SiN and the like is done on the top of the gate area to protect thegate electrode from O2 and moisture contaminations and increasing theresistivity. The protection layer is formed by making recess byselective etch and filling with SiN, followed with CMP (shown in FIG. 12b as an optional layer 405).

Deposition of the interlayer dielectric (ILD) made of such material asSiO2 and a protection interlayer dielectric (PILD) on the top of ILDsuch as SiN is very well known and these are final two steps of the FEOLintegration process. Making contacts holes through the ILD with fillingthem with any conductive material stack such as TiN and W (or any otheradequate material known in the art) is the last process before BEOLprocessing starts. Etch stop layer (ESL) deposition is performed beforethe ILD deposition for some IC applications like DRAM where a largedifference in the contact depth occurs between the DRAM and peripheryareas.

FIG. 13 a illustrates a layout design showing the important devicelayers, FIG. 13 b illustrates an equivalent circuit of animplementation, and FIG. 13 c illustrates a cross-sectional view of thedevice with the gate contact 801 and a deep n-well 202 for only p-typeof VSTB-FET's. The design can be called as 1G-4T (1 Gate-4 Transistors)integrated device having four VSTB-FET's fabricated in a single activearea (cell) with the common gate 800 according the preferred embodimentof VSTB-FET device. The active area is surrounded by the dielectric body300.

Embodiments of the invention have been described in detail with respectto transistors on bulk silicon. A VSTB can be made of various types ofsemiconductor including Ge, GaAs, InGaAs, Graphene, Carbon nanotubes,etc. Dielectrics used to form the VSTB-FET are SiO2 and SiN but they canbe any dielectrics satisfying etching selectivity properties withrespect to each other. In today state-of-the-art CMOS technology the 4basic materials used include SiO2, Si3N4, SiON andcrystalline-Si/polysilicon (poly-Si). Depending on the deposition methodthe etch rate of SiO2 deposited with different methods includingTEOS-SiO2 (Tetraethylorthosilicate based dielectric), HDP-SiO2 (HighDensity Plasma deposition based dielectric), HTO-SiO2 (High Temperaturedeposition based dielectric), etc. can be different and the layers canbe exploited for forming VSTB-FET. Depending on the deposition methodthe etch rate of Si3N4 or SiON deposited with different methodsincluding PECVD (Plasma Enhanced Chemical Vapor Deposition), LPCVD (LowPressure CVD), APCVD (Atmospheric Pressure CVD), HT (High depositionTemperature), etc. can be significantly altered and these layers can beused as dielectrics to form VSTB-FET. Some other dielectrics specifiedin this description as Mat1, Mat2, and Mat3 can be various types ofmaterials including but not limiting to HT Si3N4, Al2O3, AlON, Sc2O3,Gd2O3, AlB, SiB as Mat1 representatives, poly-Si, a-SiCH(PECVD), Al2O3,AlN, AlON as Mat2 representatives, poly-Si, a-C (DLC=Diamond LikeCarbon, a-CH), a-SiC, a-SiCN, a-SiOC as Mat3 representatives. Suchmaterials which are used in modern ULSI fabrication as TiO2, Ta2O5,ternary alloys (SiOC, etc.), 4-components (BaSrTiO3 also known as BST,etc), and multi-components alloys can be also used for masking toprovide highly selective etching rates with respect to each other infabricating VSTB without use of very expensive and accurately alignedmasks. In two instances a polysilicon layer is used as the dummyprotection layer to provide a selective etching protection of theunderlying layers which are supposed to be not etched while similarmaterials are removed in appropriate places. Such a method mitigates thealignment difficulties and problems and makes easy to fabricate thedevices bringing a smaller overhead of using some extra protection ordummy layers. Usage of Al2O3 instead of poly-Si as a dummy mask layer inthe same contents can dramatically increase manufacturability and lesscost. The more materials with selective etch properties with respect toeach other are involved the better manufacturability and lowerlithography cost can be achieved. Alternative embodiments of theinvention can be used with other types of dielectrics and semiconductormaterials on bulk semiconductor substrates. Embodiments of the inventioncan be used with a VSTB-FET having the cap layer formed from suchmaterial as a HT Si3N4, Al2O3, or any dielectric described above. Ifthere is a Si3N4 cap layer, the transistor can have a gate electrodestack fabricated from various materials, including metals and poly-Si.Alternative embodiments of the invention can be used with nanowiredevices. Embodiments of the invention are applicable to nanowire devicesas long as they have a transistor structure with a gate similar to thesilicon transistors described herein. The nanowire devices can be madeof various materials, such as Si, Graphene, or carbon nanotubes.Embodiments of the invention can involve the fabrication of square orrectangular iso-plugs, rectangular iso-trenches, self-aligned contactsto the gate electrode and Source and Drain. A specialist experienced inthe ark can make some combinations of the materials mentioned above andcreate a more manufacturable and cost effective VSTB-FET devices andprocess integration schemes within these concepts of the device andfabrication method of therein.

FIG. 14 a and FIG. 14 b illustrate an example of a particular embodimentof the VSTB-FET device having two VSTB-FET's with the common gate andformed in a single active area. The active area is surrounded by thedielectric body 300 having 2 VSTB-FET devices connected in parallel withthe common gate 800 as illustrated in FIG. 14 b. FIG. 14 a shows thedevice most important layers where the top layers 102 and 103 areremoved for clarity and FIG. 14 c shows a cross-sectional view of thestructure with a gate contact 801 and Source contacts 108. Since SD areseparated by the iso-plugs 900 the devices can be used with separatedoutput or joined together by Metal-zero's or Metal-1 interconnects. Thiscouple of devices can be duplicated vertically or horizontally as adesign brick as many times as needed in parallel to form a powerfuldevice for amplifying a signal to the long interconnects, a pad, or inESD-protection devices if the clump-based ESD-design approach isadopted. The left and the right iso-plugs can be merged. To reduce thegate-to-source/drain overlap capacitances the SD plugs 500 and 600 areformed closer to the end of VSTB's. The corners of the VSTB at the endof VSTB's are typically filled with a thicker gate dielectric stackwhich also helps reduce the overlap capacitance near the corners.

FIG. 15 a (layout design), FIG. 15 b (equivalent circuit), and FIG. 16(cross-sectional view) illustrate an example of using the iso-trenches902 to isolate two gates in the same active area. This device design istypical for logic circuits. The structure is formed by the preferableembodiment of the process flow described above.

The VSTB-FET device concept allows also integrating the standardSiO2-based gate dielectric and poly-Si-based gate electrode integrationscheme. For this approach the gate first process is more suitable whichcan be easily done for VSTB-FET devices by an experienced in the artspecialist. This is especially important for low leakage products likeDRAM access transistor and DRAM periphery, CMOS-IS (Image Sensor) andperiphery, Ultra-Low Power ULSI, Floating Gate (FG) Flash NVM, and thelike where the usage of transition metal oxide based high-k is still notpractical due to excessive metal contaminations resulting in high deviceleakages.

A few solutions are suggested below to provide more robust integrationprocess for improving the manufacturability if the current industriallithography tools do not provide the alignment accuracy required fornano-sized VSTB-FET's.

SD formation mask misalignment with the dielectric cap 101 and the gatearea is a potential concern and solutions needed to address it. If themask is overlapping not only with the dielectric cap 101 but also if themask edge goes beyond the dielectric cap 101 in the gate area directionover the dummy fill of the gate area this results in an overetch of thedummy dielectric on the gate stack side, FIG. 17 a, encircled area 111.This results in less reliable isolation between the gate and the SDwhere the isolation will be determined by the GDS (Gate DielectricStack) and make parasitic capacitance a little larger than in the casewith a good alignment. These consequences are not desirable. One way toaddress this concern is that. The protection layer 403, FIG. 17 b, canbe placed on the top of the dummy gate oxide 402. The protection layer403 should not be etched away when the SiN STI hard mask is etched in SDmask openings, should not be etch when STI SiO2 is etched away foropening SD holes, and should not react or at least less react with allmaterials of the SD stack 510 (see FIG. 17 d) when the SD formation isprocessed, FIG. 17 c through FIG. 17 f. In an exemplary embodiment theprotection layer 403 has to have a small etch rate (be selective inetching) with respect to SiN and SiO2. One of a simple candidate forsuch a material is poly-Si. So a recess etch of the dummy oxide is madeselectively to SiN on the top of STI and on the top of the dielectriccap 101 made for instance of high density SiN deposited at hightemperature LPCVD and filling it with the poly-Si layer followed withpoly-Si CMP (etch-stop layers are those SiN layers). ALD Al2O3 can bethe second choice for this protection layer. Then when the STIprotection layer made of easy to etch SiN such as PECVD SiN is etchedaway in the SD opening in a photoresist mask opening and STI-oxidestarts to be etched the plasma does not etch the dummy gate oxidebecause it is covered with the protection layer such poly-Si or a thinAl2O3 or any material from the group of Mat2, FIG. 17 c. The SD isformed by depositing the SD-stack 510 consisting of at least 3 layersinside SD holes: the poly-Si layer 501 doped opposite for n-channelVSTB-FET and p-channel VSTB-FET and annealed, a conductive barrier layer503, and the SD filling layer 504. Then by CMP all these three layersare removed from the top of the wafer, FIG. 17 e. If poly-Si is used asthe gate protection layer it will be doped a little bit but still willnot be connecting source/drain areas after CMP. Forming a recess byetching of the SD stack selectively to the SiN and poly-Si theprotection layer 505 is deposited and planarized by CMP on the top ofthe SD areas, FIG. 17 f. Next the poly-Si protection layer 403 above thedummy oxide 402 or thin Al2O3 are removed with little etch of thedielectric cap if it is made of Al2O3 as explained above followed withetching the dummy oxide itself leaving at the bottom thegate-to-substrate isolation 400 of the enough thickness to provide anacceptable small gate-to-substrate capacitance. DPN/SPA plasmanitridized Al2O3 dielectric cap helps keep the VSTB protection with noissues at all. The structure is ready for the gate stack formationmodule (“gate last” scheme).

Another potential concern left for this integration method is nowrelated to a small overetch of the VSTB hard mask, FIG. 17 c, if made ofthe similar material such as the STI hard mask and STI protection layer,such as Si3N4. This overetch might make a very small area of a fewnanometers width to be separating SD from the gate by gate dielectricstack. To address the potential concern a solution is suggested. Itshould be reminded that the hard mask for VSTB formation is formed asthe spacer at the reverse/direct STI hard mask edge with a dielectricmaterial such a high density Si3N4. But if another material (Mat1) isused which is dielectric and can be selectively etch with respect toSiO2, c-Si or poly-Si, and SiN, then the perfectly manufacturableprocess is determined with no etching of the VSTB-hard mask. The Mat1material has to have a very low etch rate (high selectivity) in allplasma etching processes which used for SiN, SiO2, and poly-Si. Mat1 inthe preferable embodiment is the high density SiN or Al2O3 (nitridizedfrom the surface or not) but it can be any dielectric material from thelist mentioned above. Another significant simplification of thepattering process and the manufacturability increase can be done at theexpense of using a material Mat2 for the protection layer 403 instead ofpoly-Si as explained above. This Mat2 is to be a dielectric, with verylow etch rate with respect to SiN, SiO2, Mat1, c-Si in correspondingetching plasmas and be not interactive with the poly-Si deposited intoSD as the first layer and occurring on the top of this Mat2 layer.Possible candidates for such materials might be low temperature ALDAl2O3, high density SiN with low H concentration, poly-Si,a-SiCH(PECVD), AlN, AlON and the like.

Channel length control is one of concerns which can affect themanufacturability through the channel length variability. In thepreferred embodiment the channel length is determined by a distancebetween the Source and Drain junctions at the channel side. Variabilityof the distance is directly translated into the variability of thechannel length. To have a control over the channel length by the Gatesize is a very favorable solution. Another strict requirement is toself-align the SD with the VSTB at the STI side. A solution based on atwo-dimensional self-alignment process (2DSA-process) suggested for SDto be self-aligned with the VSTB and the gate. Schematic 3D view of aVSTB-FET with SD self-aligned to the Gate and VSTB is shown on FIG. 18a. A 2DSA-process is used to form a 2 VSTB-FET structure with the commongate that is illustrated in FIG. 18 b through FIG. 22. Additionaladvantage of the suggested process is that Metal-zero (Me0) as the shortdistance interconnects can be formed by extending the gate electrode onthe top of the STI. FIG. 18 b illustrate the top view of the finalVSTB-FET structure where a few top layers are not shown for claritywhile they are shown in FIG. 19 a, FIG. 19 b through FIG. 22 toillustrate how the contacts are formed for SDs and the Gates. Theinitial structure for 2DSA-process is shown in FIG. 17 b where thedielectric cap 101 are formed from material Mat1 and the protectionlayer 403 are formed from material Mat2 which are selective in etchingmutually to themselves and to SiO2, SiN, c-Si/poly-Si. Then aninterlayer dielectric (ILD) made of TEOS-SiO2 102 and a protectioninterlayer dielectric (PILD) made of LP/PE CVD-Si3N4 103 are formed onthe top. Lithography step is applied with the CD-control for the gate. Atrench is selectively etched through the layers 102 and 103. To reducethe capacitance between the SD and the gate a spacer 809 is formed inthis trench by depositing a dielectric material such as Si3N4 andetching back. Then the trench is filled with the dummy gate material(Mat3) such as poly-Si, which is selective in etching to SiO2, SiN,Mat1, and Mat2, by deposition and planarization process (such as CMP). Alithographical step for SD is made with overlapping of Mat3 and the Gatearea. Actually a single window for both Source and Drain on both sidesof the trench can be open with relaxed margins for alignment. Etchingthe SD holes/trenches through the layers 102 and 103 follows withcontinuing etching through the SiN protection layer 301 and thedielectric body 300 unless the specified depth is achieved. Then the SDopenings are filled with the corresponding SD-stack as illustrated inFIG. 17 d except that a deeper area is filled because of theILD-PILD-stack layers 102 and 103, followed with CMP, recessed andprotected by layer 505 similar to as shown in FIG. 17 f but this timeplanarized at the level of layer 103 top surface. The final structureafter the SD formation is shown in FIG. 19 a, where also the sandwichedlayer as the top FEOL dielectric stack 340 is shown together with thecontact 350. In order to form the gate, the gate dummy layer made ofMat3 is etched away selectively to the Mat1, Mat2, and SiN on the top ofthe dielectric body 300. To further reduce the SD-to-Gate capacitance asecond spacer is optional to be deposited in the opened trench beforeetching the gate area protection layer 403. The protection layer 403made of Mat2 and the dummy oxide in the gate area then etched awayselectively to the SiN, c-Si and Mat1 having the hard mask made of thesandwiched layers 102, and 103, and the spacers 809. The dummy oxide 402in the gate area is etched leaving a certain layer thickness at thebottom to form the gate-to-substrate isolation 400 to reduce thegate-to-substrate capacitance. The final structures after the gate stackformation process are shown in FIG. 19 b and FIG. 20. Auxiliary FIG. 21and FIG. 22 illustrate some details of the VSTB-FET formed according tothe 2DSA-process at the certain cross-sections indicated in FIG. 18 b.This completes the fabrication of a VSTB-FET in accordance with thepresent invention of the 2DSA VSTB-FET device and method of itsfabrication.

FIG. 23 a, FIG. 23 b, FIG. 23 c, FIG. 23 d, and FIG. 23 e illustrateanother embodiment of the VSTB-FET devices where the four verticalchannel pseudo-SOI VSTB-FET's are formed with the source connected tothe substrate. The term pseudo-SOI is used to underline the devicefeature that VSTB is not isolated from the substrate by a Buried Oxide(BOX) but rather is connected to the substrate through the junction. Thedrain can be formed continuously along a perimeter to form one devicewith width equal the perimeter. The channel length is marked by arrowwith symbol L_(g) in FIG. 23 c and the same arrow is showing the channelcurrent direction from the Source 520 at the bottom to the Drain 600 atthe top. The device can be formed with a slight alteration of thepreferred formation process of VSTB-FET. After the gate area etching thedonor type ion implantation into the substrate 200 forms the Source 520for n-channel VSTB-FET and the acceptor type ion implantation into thesubstrate n-well 202 forms the Source 520 for p-channel VSTB-FET. TheSource 520 creates a highly doped source region 521 at the bottom of theVSTB. The drain if formed in the hole 600 etched in the STI as shallowas to reach the top of the VSTB with a small overlap of 5 nm to 10 nm orso to form the highly doped Drain region 602 in the VSTB. Contact to thesource is formed by etching through the gate stack 800 and thegate-to-substrate isolation layer 400 to reach the highly doped Source.Spacer 507 in the hole is formed to reduce the capacitance between asource contact plug 506 to the source 520 and the gate. If desired, inorder to reduce the source parasitic resistance a buried highlyconductive layer can be formed inside or on the top of Source 520. Oneof an embodiment comprises a formation of heavy transient metalsilicides buried layer (such as ZrSi2 or HfSi2 and the like, where themetal is to have a small diffusivity in c-Si or any substrate for thatmatter). The silicide is made of any suitable metal such as heavytransition metals (Zr, Hf, and the like) by deposition method such asMOCVD, ion implantation and the like after gate area etching followedwith a low temperature anneal for the silicide phase formation. VSTBprotection from potential metal contamination can be done by making aprotection layer made of an oxide/nitride sandwich in a form of a spaceron the VSTB which is removed after the silicide formation. If heavymetal ion implantation is used then to protect the top VSTB layers frommetal contamination a thicker than the preferred dielectric capthickness made of high density Si3N4 or Al2O3 (VSTB hard mask) is formedto be partially removed by a cleaning step after the silicide formationtogether with the metal implanted in to there. If a thin layer of heavymetal MOCVD process is used the heavy transition metal is annealed toform the silicide followed by etching of not reacting metal on the VSTBspacer walls and the top dielectric layer followed by removal of thespacer. Strictly speaking this design is not exactly SOI-VSTB-FETbecause there is an electrical connection of the body to the substratethrough the Source junction. Since typically this junction isolation isa low leakage one the VSTB is almost perfectly isolated and can becalled a pseudo-SOI type of isolation.

If desired for some specific applications a true SOI VSTB-FET can beformed as illustrated in FIG. 24 a and FIG. 24 b. The semiconductordevice of the preferred embodiment, wherein the VSTB-FET is formed in aSi—SiGe—Si sandwiched semiconductor substrate so that VSTB is cut fromthe electrical connection to the substrate at the VSTB bottom byselectively removing SiGe resulting in a true local vertical SOI body asthe main element of the VSTB-FET. The gate-to-substrate isolation layer400 can be formed by a few different processes. In one of theembodiments a SiGe layer 250 can be formed in the initial semiconductorsubstrate 200 buried under c-Si layer 260. Then during the gate areaetching the SiGe layer is laterally and selectively to c-Si etched away.This area is filled later with the gate-to-substrate isolation layer400. Moreover when forming STI trench, the etching front comes to theSiGe buried layer and it is always etch SiGe layer laterally forming anisolation region under c-Si 360 due to different anisotropy of etchingc-Si vs. c-SiGe. This phenomenon helps form the isolation region 360 atthe VSTB bottom when the gate area etching is performed. Another methodof forming the isolation region 360 is to switch from an anisotropicetching of the gate area to isotropic etching at the end of theformation process. Lateral reduction of the VSTB thickness is to beforeseen and compensated by slightly wide (thicker) VSTB hard mask. Alsoit is easy to suggest that another true SOI VSTB-FET can be made onthick SOI wafer with VSTB formation method as described above with allthe SD and Gate formation etching in depth steps stopped at the BOX-SOIinterface.

If desired a multi-nanowire device such as VSTB-nWi-FET can be formed asillustrated in FIG. 25 based on a modification of the preferredinvention embodiment. VSTB can be partitioned by the same methods asillustrated in FIG. 24 and explained above. The VSTB-nWi-FET has a greatadvantage of making logic switching with an extremely small power andthis device should have a lot of applications in future.

If necessarily, System-on-Chip, ASIC, and other products, or stand alonememory can be fabricated using the VSTB-FET's. The VSTB-FET deviceconcept and fabrication method of therein are very flexible and allowsto design and to fabricate many types of embedded and stand alonememories such as DRAM (access and periphery transistors), SRAM, andFlash NOR and NAND non-volatile memory (NVM): trap-based such as TANOSand the like, polarization based such as SrTiO2 ferroelectric and thelike, and floating gate based NVM as well as PCM-based NVM. The power ofVSTB-FET device concept is so strong that it is easy to integrate such adevice with Spin-Transfer Torque Magnetic RAM (STT-MRAM) memory elementor Ferroelectric capacitance memory element in a DRAM-like design wherethe DRAM Capacitor is replaced with SST-MRAM element or FerroelectricCap element. A slight modification of 2T NOR cell can be used forfabricating a DRAM with a MOSFET having a gate dielectric stack made ofa ferroelectric material (FeFET) and a non-ferroelectric gate dielectricaccess transistor comprises the memory cell where both FET are made in aform of VSTB-FET devices.

A Flash NVM semiconductor device can be formed by using the preferredembodiment manufacturing process or by using 2DSA-process, wherein theVSTB-FET's can be transformed in to a NOR Flash cell array with 2 bitsper cell, FIG. 26 a and FIG. 26 b. There are two types of NOR Flashcell: 1T cell made of a single memory transistor (FIG. 26 a) and 2T cellmade of a memory transistor and a select transistor in series (FIG. 26b). No new processes involved to form these embodiments are neededexcept for those processes to form material layers with memory effect. Aferroelectric dielectric stack (such as SrTiO3 and the like) ortrap-based stack (SONOS, TANOS and the like) 705 is formed as the gatedielectric stack. Repeating the cell column illustrated in FIG. 26 a andFIG. 26 b to the left and to the right a NOR Flash array can be formedwith 2 bits per cell architecture having word line 810 made of themetal-zero and two couples of bit lines: source bit line 910 and drainbit line 911 made of two first levels of the interconnect systemintegrated together with VSTB-FET design for the periphery/logic IC. 1Tcell is a very memory dense design but it brings a lot of overheads forthe periphery for smart program and erase to keep Vth after the programand erase under a tight distribution control and having a non-zero readvoltage which is the main disturb for retention characteristics. 2T cellin this respect is much simpler though it takes a larger area. Also thegate dielectric formation modules which are different for World lines(WL) and Select Lines (SL) brings some process integration overheads inorder to simplify the periphery circuits. Many ASIC and SoC designerswould prefer to use 2T cell due to these reasons. Another importantconsideration for 1T cell is that. In order to position theprogram-erase window around the initial Vth, the initial Vth is to behigh. 1T cell design having a high initial Vth in the standard planartechnology is made by a stronger doping but this method can not be usedin VSTB-FET devices because the Vth is controlled by the VSTB thicknessand the work functions of the metal gate and Source/Drain barrier layer(as for the ultimate design scaling having 4 nm of VSTB for Sitechnology). The initial Vth can be adjusted by a memory FET metal gatedeposition with the predefined work function in a range of the mid-gapwork function of 4.5 eV as for such materials like Ru, TaSiN, TaRu,TaTi, Mo, MoSi2, WSi2 alloys and the like or even in a range of higherwork functions of about 5 eV like for materials like Pt, PtSi, NiSi,TiN, AlCO, TiAlN, and their alloys, and the like. FIG. 26 c and FIG. 26d show the Program and Read conditions important to consider in NVMdesign. It should be noted that the disturbs indicated in FIG. 26 c andFIG. 26 d have a more relaxed requirements as compared to the planarMOSFET design due to the non-doped VSTB and fully-depleted mode ofoperation which helps reduce the disturb electric fields in the memorystack significantly. Voltage magnitudes for the program and readconditions are given in FIG. 26 c and FIG. 26 d for illustrativepurposes and are to be significantly smaller for the sub 20 nm memorydesigns. A specialist experienced in the art can design some variety oflayouts and architectures to enhance certain performance parametersimportant in a particular application using the same basic elements ofthe VSTB-FET and basic fabrication process of therein.

If desired a NAND Flash with 2 bits per cell can be fabricated usingVSTB-FET device and fabrication process where a ferroelectric dielectricstack (such as SrTiO3 and the like) or trap based (TANOS consisting ofTaN/Al2O3/Si3N4/SiO2/Si, SONOS consisting of Si/SiO2/Si3N4/SiO2/Si,SNONOS consisting of Si/Si3N4/SiO2/Si3N4/SiO2/Si, and the like) stack705 is formed as the gate stack as illustrated in FIG. 27 a and FIG. 27b of layout view. Repeating this column of cells to the left and to theright a NAND Flash array architecture can be formed with 2 bits percell. Depending on a specific application a simple preferred embodimentbased NVM can be made as illustrated in FIG. 27 a or a more elaborated2DSA method can be used for a much denser NVM as illustrated in FIG. 27b.

It should be noted that quite a range of varieties of the NVM gatedielectric stacks are developed these days for different applicationsand to satisfy some integration requirements. Integration of such stacksinto VSTB device concepts and fabrication methods is not sometimesstraightforward. For example, if TANOS stack is taken as the basic NVMstack then when etching the gate dummy filled dielectric such as SiO2 inorder to form the gate electrode there is no etching problem at allbecause TaN is a very good protection layer and TANOS stack is notdamaged by SiO2 etching. To the contrary if SONOS stack is used for thesame step of the SiO2 etch there is no any etch stop layer andSONOS-stack oxide can be damaged and thickness is affected with lesscontrollability. To avoid such an issue it is advisable to use SNONOSstack with a very thin SiN layer of the top of the SONOS-stack top oxidelayer. Another example is that. It is commonly accepted that the gateelectrode is made of the heavily doped n+-type poly-Si and the mainimprovement of the erase mode performance is achieved by engineering thebarrier height and dielectric constant of the top dielectric layer.However, a stack of any conductive material with a specified workfunction such as TiN, TaN and the like can be used as the gate materialcovered with poly-Si on the top of the NVM gate electrode stack. Anoptimal work function is actually the mid-gap work function which allowsimproving both the program and the erase mode. Heavily p+-doped poly-Siis an extreme case of strong improving the erase mode if the programmode has enough margins. Resistance reduction requirements have resultedin usage a more elaborated gate electrode stacks such as a policidestack (poly-Si—WN—W) and the like. A specialist skilled in the art canuse many modification of the basic structure to make it moremanufacturable with no changing the essence of the invention.

If desired a NOR Floating Gate (FG) Flash with 2 bits per cell can befabricated using VSTB-FET design FIG. 28 a, where the floating gate 711and inter-gate isolation 712 layers and the gate dielectric 710separating the floating gate from the VSTB are included as a part of thegate dielectric stack. Iso-trenches 902 needed to isolate the FG fromeach other in a single cell as illustrated in FIG. 28 a in a layoutview. Design in FIG. 28 a is of a great advantage of having a largecapacitive coupling between the FG and CG (Control Gate) resulting in aless programming voltage. Repeating this cell upward and downward and tothe left and to the right a NOR Flash array can be formed with 2 bitsper cell. 2 Bit Lines 910 and 911 and Word Line 912 are made of Metal-1and Metal-2 interconnects. If desired to make a more compact cell usageof Metal-1, Metal-2, and Metal3 interconnects can be exploited.

If desired to create a high density NVM array, a NOR Floating Gate (FG)Flash with 2 bits per cell can be fabricated using VSTB-FET designfeaturing 2DSA method where the floating gate 711 and inter-gateisolation 712 layers and the gate dielectric 710 separating the floatinggate from the VSTB are included as a part of the gate dielectric stackalong the VSTB string, FIG. 28 b. The high density comes at the expenseof a more complex processing. Design in FIG. 28 b has WL made ofmetal-zero in 2DSA design and is more compact. For having a largecapacitive coupling between the FG and CG it is desirable to etch FG inspacer type processing leaving some tapering of FG material at thebottom of the gate area to achieve a less programming voltage.

If desired a NAND FG Flash with 2 bits per cell can be fabricated usingVSTB-FET device designs and fabrication methods where the floating gate711 and the inter-gate isolation 712 are included in the gate dielectricstack as a part of the gate stack. Iso-trenches 902 are formed toisolate the FG and CG stack within a cell from other cells asillustrated in FIG. 29 a and FIG. 29 b in a layout view. By repeatingthis column to the left and to the right a NAND Flash array with N=256or 512 or so cells can be formed with 2 bits per cell. Two differentmethods are suggested to reduce the parasitic resistance along the VSTBline if the fringing electric field from the neighboring cells is notenough to provide a low resistive connection. One method involvesformation of the Source/Drain plugs which provides the heavily dopinginto the VSTB portion opposite to the iso-trenches. The other method isto use a tilted Ion Implantation in to the VSTB portion between theiso-trenches for low resistive path through VSTB column in self-alignedmanner with the iso-trenches when they are opened right before fillingthem with an isolating material like TEOS SiO2 followed with anyplanarization technique like the CMP. To isolate two columns of VSTB onthe left and right in the same active area at the top and at the bottomof the total active area the iso-plugs are used which are used anyway inthe periphery of the NAND Flash product. Two possible designs can beexploited in a particular application based on the preferred devicedesign and fabrication method or using 2DSA method. In the preferreddevice/method approach the first interconnect level can be used for WLas illustrated in FIG. 29 a. In the 2DSA device/method approach, themetal-zero lines are used for WL as illustrated in FIG. 29 b. Thefabrication process is very similar to the polarization based NAND Flashdevices using ferroelectric materials, deep trap-containing memorydielectric layers, or a composite of a dielectric with embeddedconductive nano-particles or quantum dots as described above. It isimportant to note that a very high density memory can be achieved byusing a Flash memory design shown in FIG. 29 b.

Referring now to FIG. 29 c, one of the main concern in FG Flash devicedesign is making a good Control Gate 800 to Floating gate 711 capacitivecoupling. In these devices it can be made a large enough coupling due toan extra CG-FG capacitance in vertical direction where CG 800 is locatedon the top of the FG 711 but there is no FG-to-channel capacitance, dueto using high-k stack as the inter-gate isolation layer, and due toetching of the FG 711 in a spacer formation manner with the tapering offprofile at the bottom of the FG 711. Hot electron effect or tunnelingeffect can be used for programming and tunneling back to channel can beused for erasing. It should be noted that SD's inside a column in FIG.29 a are not connected to the interconnects but serve as an electricalconductive path between the VSTB-FET's NVM cells column. Electrostaticinduced channel by the fringing electric field from CG's 800 in the VSTBportions adjacent to the iso-trenches can be strong enough allowing notto use the Ion implantation for forming the low resistive electricalconnection of the VSTB-FET NVM cells which significantly simplifies theprocess integration. The more scaled NVM cell is the stronger theelectrostatic fringing effect is developed, suggesting a greatscalability path for a VSTB-FET NVM cell design.

VSTB-FET devices are ideal candidates for a DRAM Access Transistor(VSTB-AT) and for high performance periphery devices as required by theDDR4 & DDR5 specifications. Because of no-channel doping in VSTB-FET theelectric fields in the channel are expected to be very small whichresults in a low junction leakage and in a high retention time. Alsobecause the Source/Drain can be made of poly-Si interfacial layer fordoping of VSTB it is also naturally compatible with the industrialstandard RCAT fabrication process which has Source/Drain doping frompoly-plugs and proven to provide low leakage current. Source/Drain forVSTB-AT can be made separately from the periphery VSTB-FET Source/Drainby making use the very well established complete poly-plug process.Source/Drain for the HP periphery can be made in a way suggested in thisinvention by forming Source/Drain stack to reduce the parasiticresistance. A silicide layer in the stack can be used made of heavytransition metals such as ZrSi2, HfSi2, and the like which have lowdiffusivity of Zr, Hf, and other materials like these in c-Si and cannot bring metal contaminations to the DRAM array area through diffusionin the substrate and can not reduce the retention time. The genericissue in DRAM processing is related to using high-k/metal gate. In theCapacitor last integration scheme, the Capacitor formation thermalbudget (TB) is the high temperature long time Thermal Budget (Harsh TB)applied for forming the capacitor array which does not allow using verywell developed by this time high-k/metal gate stack used across theindustry based on HfO2 material. A practical solution is to apply astack of the SiO2 interfacial layer and the high-k materials which arerobust and can withstand the Harsh TB. Such dielectrics are Si3N4 andAl2O3 deposited by ALD, plasma jet process and the like which provide nodeterioration of the interfacial SiO2 layer quality and the interfacewith the semiconductor. Poly-Si gate electrodes appropriately doped fornMOSFET and pMOSFET are a viable option for DRAM before some harshthermal budget robust materials for high-k and metal gate are developed.These practical options are totally compatible with the VSTB-FET devicedesign and the method of forming therein and can be implemented withminimal modifications of the standard industrial processingcapabilities. 3 different types of DRAM array can be suggested usingVSTB device structure: 1) horizontal channel VSTB-AT with singlerecessed word line in 1WL-2BL per cell array architecture as illustratedin FIG. 30 a and FIG. 30 b, 2) a vertical channel VSTB-AT with theshallow Drain and deep Source between two recessed word lines in 2WL-1BLper cell array architecture as illustrated in FIG. 31 a through FIG. 31c, 3) horizontal channel VSTB-AT with two recessed word lines in 2WL-1BLper cell array architecture as illustrated in FIG. 32 a and 2BL-2WLarray architecture as illustrated in FIG. 32 b.

6T SRAM array is a very frequently used embedded memory in many ULSIproducts. SRAM typical design consists of 6 transistors where 2pull-down nMOSFET transistors are 2× to 3× more powerful versus 2pull-up pMOSFET transistors and Word-line access nMOSFET transistors.When the transistors are fabricated in the standard technology accordingto the Dennard's scaling they have a very high substrate doping level(up to 3e18 cm−3 and higher) which results in a significant Vthvariations due to the random dopant fluctuations (RDF) constitutingabout 70% or so of the total Vth variability of 15 mV and more in termsof the standard deviation. Such a high variability has resulted in avery unstable SRAM functioning and XT SRAM cells designed with X=7, 8,10, and even 12 transistors are now in a research stage and manysolutions of this sort are being patented. Due to the no substratedoping feature of the VSTB-FET device design the Vth variability relatedto the RDF are very small below 1 mV. Vth variability related to theVSTB thickness variability and the channel length variability areexpected to be smaller than for the traditional MOSFET design due to theprocessing features. As a result the traditional 6T SRAM is expected tobe functioning very stable. In fabricating the Metal-zero (called inSRAM design as Metal-01) interconnects there is a choice of makingisolation between the SD top layer and Metal-01 top layer by forming aspacer like isolation in the Metal-01 trenches or in SD holes/trenches.A little more compact design of VSTB-FET based SRAM cell can be made byusing spacer formation in SD-holes/trenches. SRAM has a very intensiveset of the short distance interconnects. So an extension upwards of theMetal-01 interconnect to constitute Metal-02 interconnect is suggestedwhich is a very simple in fabricating and brings very small overhead.After the fabricating the Gate stack and Metal-01 local interconnects ina single module according to 2DSA method, a stack of a thin SiN layer,thick SiO2 and thin SiN layers is deposited. Mask is made to open thearea above SD and Metal-01 followed with a barrier metal deposition suchWN, TiN and the like followed with W deposition and CMP. A thin SiN isdeposited on the top of such structure before making the contactILD-PILD stack formation. Metal-01 and Metal-02 local interconnectlayers can be used in HP logic or analog ULSI very efficiently as wellas a periphery of the SRAM memory array (embedded or stand-alone).

Source/Drain etching depth is an important process performance parameteraffecting the channel width variability and it would be very desirableto have it under tighter control. One way of doing it is to use an etchstop layer buried into STI dielectric body. The semiconductor device ofthe preferred embodiment, wherein the VSTB-FET is formed in such a waythat the STI buried etch stop layer 511 is formed, FIG. 34 a and FIG. 34b. The etch stop layer 511 is made of a dielectric with selectivity toetching of SiO2 and the like materials for SD etching depth control. Theburied layer is formed during the STI formation by depositing SiO2followed with any nitridation technique such as directional plasmanitridation, Si3N4 layer deposition and the like at the appropriatedepth, followed with the SiO2 (TEOS, HDP, and the like) deposition,recess anisotropic etching, followed with another SiO2-TEOS depositionand CMP. The additional layer might significantly increase the VSTB-FETmanufacturability if the STI SiO2 etch process is not capable of anaccurate etch rate control. Fabrication of the VSTB-FET Source/Drainswith more controllable depth is provided by a buried dielectric layerwith high selectivity to etching of SiO2 and the like materials forSource/Drain depth control resulting in the channel width control andsubthreshold leakage control.

It is always desirable to make as dense MOSFET's design as possible. Anexemplary embodiment is suggested to form a couple of CMOS inverters ina single active area as illustrated in FIG. 35 a through FIG. 35 d.Process 113 (FIG. 35 a and FIG. 35 b) is suggested to form a couple ofCMOS inverter in a single active area. N-well 202 formation process ismoved from FEOL process after STI formation to a FEOL point when thec-Si is etched away in an active area and gate area is opened. Then atwo quarter tilted Ion Implantation of n-type doping such as Phosphorusfor c-Si is applied. A typical tilt angle depends on an aspect ratio ofthe VSTB height to the gate area size and is such that the half of theactive area at the bottom of the gate area is doped as n-type 202leaving the other half to stay p-type doped (as initially). Rotationangle is in a range 3 to 5 degrees to provide no parasitic doping of theVSTB belonging to n-MOSFET's due to the ion lateral spreading. A metalgate stack with a mid-gap work function range of about 4.5 eV made ofmaterials such as Ru, TaSiN, TaRu, TaTi, Mo, MoSi2, WSi2 alloys and thelike is formed which is common for both n-MOSFET and p-MOSFET. Thismethod provides a very simple integration of the high Vth VSTB-FETfabrication and can be used for low power and very low powerapplications. It is a little bit more difficult to implement this deviceconcept when two different work function materials are needed fornMOSFET and pMOSFET. A similar tilted ion implantation method would beapplicable for the work function modification from one type of the workfunction, say n+-type of materials, into the p+-type of the workfunction materials. Unfortunately, by now there is no any robusttechnique to turn the low work function material into the high workfunction (or vice-versa) by some ion implantation as simple as theindustry needs. So such a method has to be yet invented. In FIG. 35 c anexemplary layout design is suggested to illustrate a particular circuitrealization shown in FIG. 35 d. One feature of Drain/Out's formation inFIG. 35 c is to be mentioned. An electrical contact to the n-well inDrain area and Source and Drain shorts in Out areas are needed. This canbe done by separate tilted doping of extended size of the Drain andOut's using the litho step which makes it a little not as small in sizeas it needs to be. This is illustrated in FIG. 35 c where by dashedL-shaped rectangular as a mask for p-MOSFET Drain/Out's poly-Sip+-doping is indicated. For n-MOSFET the similar mask for poly-Sin+-doping is an L-shaped dot-dashed rectangular and the hole-shape inDrain area. If n-well is going to be common for a few VSTB-FET's onlyone contact for n-well is needed. EUV lithography would be extremelyneeded for such an inverter design. It is easier to do if neighboringactive areas are used in such a way that the common doping layers can bedesigned and used.

As mentioned above any MOSFET with sub-10 nm channel length operates inthe ballistic regime of the current transport since the free-path forelectrons and holes in non-doped c-Si is also about 10 nm. In othermaterials such as GaAs, Ge, Graphene, and the like the free-path is evenlonger. Though there are some arguments whether the ballistic carriervelocity can be affected by the strain in the semiconductor bodymaterial or not it is clear that it is not difficult to apply all theknown stress-engineering techniques by a specialist skilled in the artand get a gain in the mobility or the ballistic velocity. Both themobility and the velocity enhancement are certainly preferable for alonger channel length, for example, longer than 15 nm or so, and can beimplemented because the VSTB-FET device design and manufacturing processare naturally absorbing all the stress engineering techniques known bytoday such as: (a) the intrinsically stressed semiconductor substratewhich will keep the stress during VSTB formation since the VSTB isattached to the vertical wall of STI, (b) the stress memorizationtechnique, (c) uniaxial along-channel compressive stress for p-channelMOSFET, (d) uniaxial along-channel tensile stress for n-channel MOSFET,(e) selective epitaxial growth of SD in the SD holes with an intrinsiccompressive stress coming from materials like SiGe (for p-channel) orwith an intrinsic tensile stress coming from materials like Si(C) (forn-channel) instead of depositing a thin poly-Si oppositely doped forn-channel and p-channel MOSFET's as described in the preferredembodiment, (f) STI intrinsic stress (tensile or compressive as neededaccordingly) can be formed during the STI formation process. Also theoppositely intrinsically stressed iso-plugs/iso-trenches at the end ofthe channel behind SD can be used for applying the stress engineering tothe VSTB-FET. The applicability of all these stress engineeringtechniques to the VSTB-FET suggests that the novel device in thisinvention is really highly manufacturable because of its flexibility toabsorb the best achievements and best practice in the device fabricationin the semiconductor industry.

In scaling the VSTB down the thickness is coming to the ultimatethickness equal to the inversion layer thickness in a particularmaterial used for the VSTB. The typical inversion layer thickness isabout 4 nm for semiconductor like c-Si and closed to this for manysemiconductor materials. In ultimately scaled VSTB-FET design when thesemiconductor body thickness gets equal or thinner than the inversionlayer thickness the semiconductor gap start depending on the VSTBthickness. In this situation a new knob for Vth engineering is thesemiconductor body thickness. Any High Performance (HP) IC needs atleast 3 levels of the Vth: low Vth (HP MOSFET), Medium Vth (MediumPerformance MOSFET), and high Vth (Standard Performance MOSFET). It ispossible to adjust the Vth by making use of the Short Channel Effects(SCE) and the channel length is made of such a size that it modulatesthe Vth's. This knob is available in VSTB-FET concept and can be used ifdesired. To make a few Vth's for the same channel length a VSTBthickness can be adjusted by the dielectric cap (VSTB hard mask) width.This can be done by making the thickest cap (made for low Vth) for allthe MOSFET in a die. Then by opening the area with Medium Vth VSTB-FET'sand by trimming the cap width by a selective etch a medium Vth VSTB canbe formed. Then opening the high-Vth VSTB-FET areas and trimming furtherthe cap width the high Vth VSTB-FET are formed.

Another VSTB-FET design aspect of the ultimate VSTB thickness is that.There is no need for making Source and Drain doping regions because thematerial placed into the Source/Drain holes/trenches is now in immediatecontact with the inversion layer. So the entire Vth engineering problemhas now an additional free parameters (knobs) provided by VSTB FETconcept which allows to design a set of Vth's like HP (HighPerformance), MP (Medium Performance), and SP (Standard Performance) byvarying the materials not only at the gate stack side of MOSFET and bythe VSTB thickness but also by the Source/Drain material work function(Wf). The last option is available for first time in regards to VSTB-FETdevice structure suggested in this invention. The VSTB does not have tohave Source/Drain (SD) regions doped accordingly for nMOSFET and pMOSFETbecause the inversion layer is taking all the VSTB thickness and theSource/Drain must provide the electrical contact to the inversion layerfrom the opposite to the gate side. Such a contact is a hetero junctionbetween the VSTB semiconductor material and the Source/Drain material ormaterial stack formed of materials providing “ideal contact” to theinversion layer from the opposite to gate side. Typically theheterointerface between two materials has some final non-zero density ofinterfacial traps (Dit a.k.a. localized states). The ideal contact is tohave zero interface trap concentration or negligibly small density ofbelow 3e10 per cm² in a practical case of making Fermi-level pinningfree interface. Source/Drains materials of choice also have an importantparameter such as their work functions. The work functions of theseSource/Drain (SD) materials are now affecting the threshold voltages ofthe VSTB-FET and can be used for Vth adjustment for a particularapplication depending on choices made for the work functions of the gatematerials: n-GS-WF for nMOSFET and p-GS-WF for pMOSFET. Thus n-SD-metalwork function (n-SD-WF) material for nMOSFET and p-SD-metal workfunction (p-SD-WF) for pMOSFET are to be considered in a Vth design ofVSTB-FET's. The ideal SD contact needs to have an inert interfaciallayer between the SD material responsible for the right WF's and theVSTB. The band gap and band gap offsets of this interfacial materialwith respect to the VSTB material is another parameter which can be aknob to adjust the Vth of the corresponding VSTB-FET's. So in theultimate VSTB-FET design these set of material parameters is importantand can significantly complicate or simplify the VSTB-FET Vth designobjectives.

The question arises if there are any materials which can significantlyreduce the inversion layer thickness by say an order of magnitudecompared to the Si inversion layer thickness? One of the ultimatematerials such as Graphene has indeed such a density of state (DOS)which results in the inversion layer thickness equal to the layerthickness. In a single layer Graphene this thickness is equal to 0.3 nmand in a double-layer Graphene (a.k.a bilayer Graphene) the thickness isequal 0.6 nm. Graphene is a viable semiconductor material with a veryhigh mobility in ordered Graphene morphology and still reasonably highmobility in a form of slightly disordered morphology when deposited onthe amorphous material like SiO2. A significant mobility improvement inGraphene can be achieved if a suitable lattice template is used forpseudo-epitaxial growth of the Graphene. Such a template can be madefrom a material which is a close relative to the Graphene which is BoronNitride (BN). BN is a highly ordered quasi-crystal structure dielectricmaterial deposited on many disordered substrates like SiO2 and theothers. Those are well established facts that a high-k material such asHfO2 and ZrO2 and metal contact such as Hf, Zr, TiN and others can beused for the Graphene as the gate dielectrics and as contact andconductive materials correspondingly. They can be used when exploitingtoday rather exotic material like Graphene as a VSTB material. Vthadjustment objectives can be solved with the approach suggested in thisinvention. Also Carbon nano-tubes (C-nT) can be used in a disorderedform as a highly conductive filling material in the gate electrode andin Source/Drain holes and trenches. Slight order in depositing C-nT canbe made if the Langmuir-Blodgett type of method is used for aquasi-ordered deposition of C-nT into a deep holes and trenchesresulting in a higher conductivity.

In the foregoing specification, specific exemplary embodiments of theinvention have been described. It will, however, be evident that variousmodifications and changes may be made thereto. The specification anddrawings are, accordingly, to be regarded in an illustrative rather thana restrictive sense.

Thus, Vertical Super-Thin Body Field Effect Transistors (VSTB-FETs) andmethods of fabrication have been described.

1. A transistor device, comprising: a semiconductor substrate; adielectric body, the dielectric body embedded in the semiconductorsubstrate and including sidewalls; and a semiconducting verticalsuper-thin body (“VSTB”) formed from the semiconductor substrate andsupported by at least the sidewall of the dielectric body, the VSTBserving as a channel for the transistor device.
 2. The transistor deviceof claim 1, wherein the VSTB thickness is less than 10 nm.
 3. Thetransistor device of claim 1, wherein the VSTB additionally serves as achannel for neighboring transistor devices.
 4. A transistor device,comprising: a semiconductor substrate; a dielectric body, the dielectricbody embedded in the semiconductor substrate and including sidewalls; asemiconducting vertical super-thin body (“VSTB”) formed from thesemiconductor substrate and supported by at least the sidewall of thedielectric body, the VSTB having two vertical faces, a first face and asecond face, the first face in contact with the sidewall of thedielectric body, the VSTB serving as a channel for the transistordevice; at least one source and drain electrode pair (electrode pair),comprising a source electrode and a drain electrode formed in isolatedholes made in the dielectric body, wherein each source electrode andeach drain electrode physically contact the first face of the VSTB; anda gate, the gate in contact with either the first or the second face. 5.The transistor device as recited in claim 4, wherein the second face ofthe VSTB is supported by a second dielectric body, the second dielectricbody associated with a neighboring transistor device formed in thesemiconductor substrate.
 6. The transistor device as recited in claim 4,wherein the gate contacts the second face and the VSTB is wrapped aroundthe gate such that the second face of the VSTB makes contact with thegate on all sides in at least a 2D plane, and including at least asecond source and drain electrode pair and arranged such that at leastfour transistors are created using the single gate.
 7. The transistordevice as recited in claim 4, wherein the VSTB is a first VSTB and thedielectric body is a first dielectric body, and further comprising: asecond VSTB; and a second dielectric body; wherein the second face ofthe second VSTB contacts an opposite side of the gate than contacts thefirst VSTB, and the second VSTB includes at least one additionalelectrode pair, thereby creating a second transistor mirroring thetransistor device and both the second transistor and the transistordevice using said gate.
 8. The transistor device as recited in claim 4,wherein said semiconductor substrate is further electrically andphysically connected to multiple VSTBs in a single active area withisolated source and drain electrodes and where gates are separated byforming an isolation trench through the gate stack and filled with adielectric material.
 9. The transistor device of claim 4, wherein thesemiconductor substrate used is a silicon-on-isolator such that the VSTBis separated from the semiconductor substrate electrically by the buriedoxide layer and the gate-to-substrate isolation layer is the isolatorlayer in the semiconductor substrate.
 10. The transistor device of claim4, wherein the semiconductor substrate has multiple alternating layersof semiconductor material and a dielectric or a second semiconductormaterial with a substantial difference in lateral etch rate such thatwhen formed, the VSTB comprises nanowires parallel to the substrate. 11.An array of transistors formed on a single semiconductor substrate, eachtransistor in the array comprising: a dielectric body, the dielectricbody embedded in the semiconductor substrate and including sidewalls; asemiconducting vertical super-thin body (“VSTB”) formed from thesemiconductor substrate and supported by at least the sidewall of thedielectric body, the VSTB having two vertical faces, a first face and asecond face, the first face in contact with the sidewall of thedielectric body, the VSTB serving as a channel for the transistordevice; at least one source and drain electrode pair (electrode pair),comprising a source electrode and a drain electrode formed in isolatedholes made in the dielectric body, wherein each source electrode andeach drain electrode physically contact the first face of the VSTB; anda gate, the gate in contact with either the first or the second face.12. The transistor array of claim 11, each transistor in the arrayfurther comprising: a memory stack which is formed on either the firstface or the second face of the VSTB, between the gate and the VSTB,thereby enabling the transistor device to be used as a memory device.13. The transistor array as recited in claim 11, further comprising: ametal-zero interconnect electrically connected to the gate butelectrically isolated from the electrodes pair, the metal-zerointerconnect electrically connecting the gate of a plurality oftransistors in the array of transistors, thereby configuring the gate ofneighboring transistor devices act as a common gate.
 14. The transistorarray as recited in claim 11, further comprising: a metal-zerointerconnect electrically connected to either the source electrode ordrain electrode and electrically isolated from other electrode andprovides an electrical connection to a corresponding electrode on aneighboring transistor.
 15. The transistor array of claim 11, furthercomprising: isolation plugs, wherein the isolation plugs sever the VSTBon either side of each transistor in the array such that at least aplurality of the transistors in the array do not share a common VSTB.16. The transistor array of claim 12, wherein the transistor array iscomprised of cells, the transistor array is configured as a circuit toact as a NOR flash memory array and further comprising: bit lines wheresource and drain electrodes are common for every cell connected to thebit lines and gates purposed as word lines.
 17. The transistor array ofclaim 12, wherein the array is configured as a circuit to act as a NANDflash memory array.
 18. The transistor array of claim 12, wherein groupsof at least six transistors in the array are wired as a circuit andfunction as a SRAM array cell.